L2D2 at FEMS EUROMAT 2023: Laser-Induced Transfer as a Digital Route to 2D Optoelectronics and Sensing
- Sep 11, 2023
- 1 min read
The L2D2 consortium took part in FEMS EUROMAT 2023, held 3–7 September 2023 in Frankfurt, Germany, a major European meeting for the materials science community.
L2D2’s contribution was led by Prof. Ioanna Zergioti, who served both as one of the conference’s scientific organisers and as a speaker. In an oral presentation titled “Laser Induced Transfer of 2D materials: a digital fabrication solution for 2D optoelectronics and sensing applications,” she addressed a key challenge for wafer-scale deployment of graphene and other 2D materials: achieving clean, solvent-free transfer from growth substrates to device chips without introducing defects that degrade performance.
The talk highlighted Laser-Induced Forward Transfer (LIFT) as a digital, solvent-free approach for the high-resolution placement of 2D material “pixels.” Results were presented on the transfer of graphene, MoS₂, hBN, and 2D heterostructures, with film quality validated through SEM and Raman spectroscopy, alongside electrical assessment including carrier mobility extraction from IV measurements. A proof-of-concept demonstration showed patterned pixels and heterostructures suitable for FET-type devices, with transferred graphene achieving electron and hole mobilities up to 1800 cm²·V⁻¹·s⁻¹.
In addition, the presentation reported 2D-material-based capacitors using graphene as the top electrode and SiO₂ or hBN as dielectrics, reaching capacitance above 10 nF/cm² and targeting improved device stability. Overall, the results reinforced LIFT’s promise for wafer-scale integration, supporting broader industrial adoption of 2D materials across electronics, optoelectronics, photonics, and sensing.





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